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IXTA 86N20T
IXTP 86N20T
IXTQ 86N20T
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C unless otherwise specified)
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 10 V; I D = 0.5 I D25 , Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 15 V, V DS = 0.5 V DSS , I D = 43 A
R G = 3.3 Ω (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
46
78
4500
550
73
22
24
52
29
90
30
23
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.31 ° C/W
R thCS
TO-220
TO-3P
0.50
0.25
° C/W
° C /W
Source-Drain Diode
Characteristic Values
T J = 25 ° C unless otherwise specified)
Symbol
Test Conditions
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V, Note 1
I F =25A, -di/dt = 100 A/ μ s
140
86
260
1.5
A
A
V
ns
V R = 100V, V GS = 0 V
Note 1: Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %;
*: Current may be limited by externalterminal currnet limit.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405 B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
7,005,734 B2
7,063,975 B2
7,071,537
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